P-Channel Vertical D-MOS Intermediate Level FET 250V / 225mA / 15 Ohm
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: 250 V
Id - Continuous Drain Current: 225 mA
Rds On - Drain-Source Resistance: 15 Ohms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Configuration: Single Dual Drain
Pd - Power Dissipation: 1.5 W
data sheet:
BSP225.pdf
