Silicon N Channel MOSFET For High Speed Switching And
Analog Switch Applications
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 50 V
Id - Continuous Drain Current: 100 mA
Rds On - Drain-Source Resistance: 20 Ohms
Vgs - Gate-Source Voltage: - 7 V, + 7 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
Pd - Power Dissipation: 200 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt:
SSM6N17FU.pdf
