2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
- Organization
Memory cell array 2112 × 128K × 8
Register 2112 × 8
Page size 2112 bytes
Block size (128K + 4K) bytes
- Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
- Mode control
Serial input/output
Command control
- Number of valid blocks
Min 2008 blocks
Max 2048 blocks
- Power supply
VCC = 1.7V to 1.95V
- Access time
Cell array to register 25 ?s max
Serial Read Cycle 25 ns min (CL=30pF)
- Program/Erase time
Auto Page Program 300 ?s/page typ.
Auto Block Erase 2.5 ms/block typ.
- Operating current
Read (25 ns cycle) 30 mA max.
Program (avg.) 30 mA max
Erase (avg.) 30 mA max
Standby 50 ?A max
Datenblatt:
TC58NYG1S3EBAI5.pdf
