N-Channel 100-V (D-S) 175 °C MOSFET
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 40 A
Rds On - Drain-Source Resistance: 25 mOhms
Vgs th - Gate-Source Threshold Voltage: 1 V
Vgs - Gate-Source Voltage: 10 V
Qg - Gate Charge: 40 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 136 W
Datenblatt:
SUD40N10.pdf
