FDN337N

N-Channel MOSFET

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.2 A
Rds On - Drain-Source Resistance: 65 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
Qg - Gate Charge: 9 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 mW

Datenblatt: FDN337N.pdf