P-Channel HEXFET® Power MOSFET 100V/1,1A
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 1.1 A
Rds On - Drain-Source Resistance: 1.2 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 8.7 nC
Pd - Power Dissipation: 3.1 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt:
IRFL9110.pdf
