SI2302ADS-T1-E3

N-Channel 1.25-W, 2.5-V MOSFET

FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) : 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Vgs(th) (Max): 1.2V
Gate Charge (Qg) (Max): 10nC
Vgs (Max) : +-8V
Input Capacitance (Ciss) (Max): 300pF
Power Dissipation (Max): 700mW
Rds On (Max): 60 mOhm
Operating Temperature: -55°C ... 150°C

Datenblatt: SI2302ADS.pdf