BS170

N-Channel Vertical D-MOS Transistor

ransistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 500 mA
Rds On - Drain-Source Resistance: 1.2 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Pd - Power Dissipation: 830 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: BS170.pdf