MTD10N10EL

MOS E−FET™ Power Field Effect Transistor 100V / 10A / 0.22Ohm

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id): 10A (Tc)
Drive Voltage: 5V
Rds On: 220mOhm
Vgs(th) (Max): 2V
Gate Charge: 15nC at 5V
Vgs (Max): ±15V
Input Capacitance: 1040pF at 25V
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Operating Temperature: -55°C - 150°C (TJ)

Datenblatt: MTD10N10EL.pdf