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SI1912EDH-T1-E3
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This product was added to our catalog on Tuesday 18 September, 2012.

SI1912EDH-T1-E3

Model 12613
Manufacturer Vishay
Only left 2000
Ident-Code SI1912EDHT1E3
Date Code 2006+
Packing Unit 1
Packing cut tape
Mounting Form SC70-6
RoHs-conform yes
Price excl. Tax:
Your Quantity1+500+ 1000+ 2000+ 
Price for each0.25 EUR0.20 EUR0.18 EUR0.15 EUR
Your savings- 20%28%40%
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Reviews
Dual N-Channel 20 V (D-S) MOSFET

FET Type: Dual N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 1.13A
Rds On (Max): 280 mOhm
Vgs(th) (Max): 450mV
Gate Charge (Qg): 1nC
Max Power: 570mW
Operating Temperature: -55°C / 150°C


data sheet: SI1912EDH.pdf