MOSFET N-Channel Power Trench
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 200 A
Rds On - Drain-Source Resistance: 2.6 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 83 nC
Pd - Power Dissipation: 250 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt:
FDBL0260N100.pdf
