TP2104K1

P-Channel Enhancement-Mode Vertical DMOS FET -40V / -160mA / 6.0 Ohm

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 160 mA
Rds On - Drain-Source Resistance: 6 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Pd - Power Dissipation: 360 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: TP2104K1.pdf