N-Channel HEXFET Power MOSFET, 42A / 100V / 0.036 Ohm
ransistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 39 A
Rds On - Drain-Source Resistance: 36 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 110 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 140 W
Datenblatt:
IRFP150NPBF.pdf
