IRFD210PBF

N-Channel MOSFET 200V / 600mA / 1.5Ohm

Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 600 mA Rds On - Drain-Source Resistance: 1.5 Ohms Vgs - Gate-Source Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 8.2 nC Pd - Power Dissipation: 1.3 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C

Datenblatt: IRFD210.pdf