STD25NF10LT4

N-Channel MOSFET

Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 25 A
Rds On - Drain-Source Resistance: 30 mOhms
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 52 nC
Pd - Power Dissipation: 100 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C