IPB80N06S2L-11

OptiMos N-Channel Power Transistor 55V/80A/10.7mOhm

Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 10.7 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
Qg - Gate Charge: 80 nC
Pd - Power Dissipation: 158 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

Datenblatt: IPB80N06S2L-11.pdf