OptiMos N-Channel Power Transistor 55V/80A/4.8mOhm
- N-channel - Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (lead free)
- Ultra low Rds(on)
- 100% Avalanche tested
- Vds - Drain-Source Breakdown Voltage: 55 V
- Id - Continuous Drain Current: 80 A
- Rds On - Drain-Source Resistance: 4.8 mOhms
- Vgs - Gate-Source Voltage: 20 V
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 175 C
- Configuration: Single
- Pd - Power Dissipation: 300 W
IPB80N06S2-05.pdf
