N-Channel PowerTrench MOSFET 100V / 164A / 4.7mOhm
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 164 A
Rds On - Drain-Source Resistance: 4.7 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 210 nC
Pd - Power Dissipation: 375W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Datenblatt:
FDP047N10.pdf