IRF7492PBF

N-Channel HEXFET Power MOSFET 200V / 3.7A / 79mOhm

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id): 3.7A
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max): 79mOhm
Vgs(th) (Max): 2.5V
Gate Charge (Qg) (Max): 59nC
Vgs (Max): +-20V
Input Capacitance (Ciss) (Max): 1820pF
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55C to 150C

Datenblatt: IRF7492.pdf