A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a
hermetically sealed metal case
Input to Output Voltage ±1 kV
Emitter-Collector Voltage 7 V
Collector-Emitter Voltage 40 V
Collector-Base Voltage 45 V
Reverse Input Voltage 2 V
Input Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (Note 1) 40mA
Peak Forward Input Current (Value applies for tw < 1 PRR < 300 pps) 1 A
Continuous Collector Current 50 mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (Note 2) 300 mW
Storage Temperature -65°C to +125°C
Operating Free-Air Temperature Range -55°C to +125°C
Lead Solder Temperature (10 seconds max., 1/16” from case) 240°C
Datenblatt:
4N23.pdf