2SC2979

Silicon NPN Triple Diffused

- High voltage, high speed and high power switching
- Collector to base voltage VCBO: 900 V
- Collector to emitter voltage VCEO: 800 V
- Emitter to base voltage VEBO: 7 V
- Collector current IC: 3 A
- Collector peak current IC(peak): 6 A
- Base current IB: 1.5 A
- Collector power dissipation PCtot: 40 W
- Junction temperature Tj: 150 °C
- Storage temperature Tstg: –55 to +150 °C

data sheet: 2SC4686A.pdf