IRFR3505PBF

HEXFET® Power MOSFET 55V / 30A / 0.013 Ohm

Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 71 A
Pd - Power Dissipation: 140 W
Rds On - Drain-Source Resistance: 13 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Qg - Gate Charge: 62 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

Datenblatt: IRFR3505.pdf