IRF840S

HEXFET Power MOSFET, 500V / 8A

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 8 A
Rds On - Drain-Source Resistance: 850 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 38 nC
Pd - Power Dissipation: 125 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: IRF840S.pdf