NPN Silicon RF Transistor
- Kollektor-Emitterspannung VCEO max.: 12 V
- Kollektor-Basisspannung VCBO: 20 V
- Emitter-Basisspannung VEBO: 2 V
- Maximaler Kollektorgleichstrom (DC): 0.15 A
- Bandbreitengewinnungsprodukt fT: 7500 MHz
- Maximale Betriebstemperatur: + 150 C
- For low noise, low distortion broadband amplifiers in antenna and telecommunication
systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
- Power amplifier for DECT and PCN Systems
- fT = 7.5 GHz F = 1.5 dB at 900 GHz
data sheet:
BFG196.pdf
