BSP315P

SIPMOS(R) Small-Signal-Transistor

Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 60 V
Id - Continuous Drain Current: - 1.17 A
Rds On - Drain-Source Resistance: 500 mOhms
Vgs th - Gate-Source Threshold Voltage: - 2 V
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 7.8 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: BSP315P.pdf