Smart Highside Power Switch TempFET
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 50 V
Id - Continuous Drain Current: 6.7 A
Rds On - Drain-Source Resistance: 120 mOhms
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Vgs - Gate-Source Voltage: 10 V
Pd - Power Dissipation: 50 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
data sheet:
BTS115A.pdf
