IRFP22N50APBF

Power HEXFET 500V / 22A

ransistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 22 A
Rds On - Drain-Source Resistance: 230 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 120 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 277 W

data sheet: IRFP22N50A.pdf