P-Channel Power MOSFET 50 V, 130 mA
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 50 V
Id - Continuous Drain Current: 130 mA
Rds On - Drain-Source Resistance: 10 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 2.2 nC
Pd - Power Dissipation: 225 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt:
BSS84L.pdf
