2SK1530-Y(F)

Silicon N Channel MOSFET For High-Power Amplifier Application

Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 12 A
Vgs - Gate-Source Voltage: 20 V
Fall Time: 60 ns
Rise Time: 25 ns
Pd - Power Dissipation: 150 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: 2SK1530.pdf