M29F040B-120K1

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

- SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
- ACCESS TIME: 45ns
- PROGRAMMING TIME
– 8 us per Byte typical
- 8 UNIFORM 64 Kbytes MEMORY BLOCKS
- PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
- ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
- UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
- LOW POWER CONSUMPTION
– Standby and Automatic Standby
- 100,000 PROGRAM/ERASE CYCLES per BLOCK

Datenblatt: M29F040B.pdf