VP0808M

P-Channel Enhancement-Mode MOSFET Transistor

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 310 mA
Rds On - Drain-Source Resistance: 2.5 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Pd - Power Dissipation: 1 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: VP0808L.pdf