BSS84P

MOSFET P-CH 60V 0.17A Automotive

Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 170 mA
Rds On - Drain-Source Resistance: 5.8 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 1 nC
Pd - Power Dissipation: 360 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: BSS84P.pdf