SQ3426AEEV-T1-GE3

N-Channel MOSFET

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 7 A
Rds On - Drain-Source Resistance: 32 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 11.5 nC
Pd - Power Dissipation: 5 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

Datenblatt: SQ3426AEEV.pdf