SI7658ADP-T1-GE3

N-Channel MOSFET

Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 2.2 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Qg - Gate Charge: 110 nC
Pd - Power Dissipation: 83 W
Minimum Operating Temperature: - 50 C
Maximum Operating Temperature: + 150 C

Datenblatt: SI7658ADP.pdf