IRF7509

P/N-Channel Dual MOSFET

Transistor Polarity: N-Channel, P-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.7 A
Rds On - Drain-Source Resistance: 200 mOhms
Vgs - Gate-Source Voltage: 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
Qg - Gate Charge: 7.8 nC, 7.5 nC
Pd - Power Dissipation: 1.25 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C