SUM110P06-07L-E3

P-Channel MOSFET

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 110 A
Rds On - Drain-Source Resistance: 6.9 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 230 nC
Pd - Power Dissipation: 375 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

Datenblatt: SUM110P06-07L.pdf