SI2304BDS-T1-E3

MOSFET N-Channel

Technology: Si
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.6 A
Rds On - Drain-Source Resistance: 70 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 2.6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

Datenblatt: SI2304BDS.pdf