SI7469DP-T1-E3

P-Channel MOSFET

Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 28 A
Rds On - Drain-Source Resistance: 29 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 160 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 83 W

Datenblatt: SI7469DP.pdf