SI5486DU-T1-GE3

N-Channel MOSFET

Drain to Source Voltage Vdss: 20 V
Current - Continuous Drain Id: 12A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max): 15mOhm at 7.7A, 4.5V
Vgs(th) (Max) at Id: 1V at 250µA
Gate Charge (Qg) (Max): 54 nC
Vgs (Max): +-8V
Input Capacitance (Ciss) (Max): 2100 pF
Power Dissipation (Max): 3.1W
Operating Temperature: -55C to 150C

Datenblatt: SI5486DU.pdf