SD56120

RF MOSFET Transistors

Transistor Polarity: N-Channel
Technology: Si
Id - Continuous Drain Current: 14 A
Vds - Drain-Source Breakdown Voltage: 65 V
Operating Frequency: 1 GHz
Gain: 14 dB
Output Power: 100 W
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C

data sheet: SD56120.pdf