IPB037N06N3GATMA1

N-Channel MOSFET

Technology: Si
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 90 A
Rds On - Drain-Source Resistance: 3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 98 nC
Pd - Power Dissipation: 188 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

Datenblatt: IPB037N06N3G.pdf