SIR432DP-T1-GE3

MOSFET N-CH 100V 28.4A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) : 28.4A
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max): 30.6mOhm
Vgs(th) (Max): 4V
Gate Charge (Qg) (Max): 32 nC
Vgs (Max): +-20V
Input Capacitance (Ciss) (Max): 1170 pF
Power Dissipation (Max): 5W
Operating Temperature: -55C zo 150C