ISZ080N10NM6

OptiMOS(TM) 6 Power-Transistor, 100 V

Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 75 A
Rds On - Drain-Source Resistance: 8.04 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3.3 V
Qg - Gate Charge: 19 nC
Pd - Power Dissipation: 100 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

Datenblatt: ISZ080N10NM6.pdf