HEXFET Power MOSFET, 200V / 46A / 0.055 Ohm
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 46 A
Rds On - Drain-Source Resistance: 55 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 230 nC
Pd - Power Dissipation: 280 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt:
IRFP260.pdf
