IRF7700

P-Channel HEXFET Power MOSFET -20V/-8,6A

- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Vds - Drain-Source Breakdown Voltage: - 20 V
- Id - Continuous Drain Current: - 8.6 A
- Rds On - Drain-Source Resistance: 15 mOhms
- Vgs th - Gate-Source Threshold Voltage: - 1.2 V
- Qg - Gate Charge: 89 nC
- Maximum Operating Temperature: + 150 C
- Pd - Power Dissipation: 1.5 W

Datenblatt: IRF7700.pdf