80V/2.5A Peak, High Frequency Full Bridge FET Driver - Drives N-Channel FET Full Bridge Including High Side Chop Capability - Bootstrap Supply Max Voltage to 95VDC - Drives 1000pF Load at 1MHz in Free Air at +50°C with Rise and Fall Times of Typically 10ns - User-Programmable Dead Time - Charge-Pump and Bootstrap Maintain Upper B...

SIPMOS(R) Small-Signal-Transistor Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 60 V Id - Continuous Drain Current: - 1.17 A Rds On - Drain-Source Resistance: 500 mOhms Vgs th - Gate-Source Threshold Voltage: - 2 V Vgs - Gate-Source Voltage: 20 V Qg - Gate Charge: 7.8 nC Minimum Operating Temperature: ...

NPN Silicon RF Transistor - Kollektor-Emitterspannung VCEO max.: 12 V - Kollektor-Basisspannung VCBO: 20 V - Emitter-Basisspannung VEBO: 2 V - Maximaler Kollektorgleichstrom (DC): 0.15 A - Bandbreitengewinnungsprodukt fT: 7500 MHz - Maximale Betriebstemperatur: + 150 C - For low noise, low distortion broadband amplifiers in ant...

Bipolar NPN Silicon Amplifier Transistor Collector- Emitter Voltage VCEO Max: 45 V Collector- Base Voltage VCBO: 45 V Emitter- Base Voltage VEBO: 5 V Total Device Dissipation Pd = 1.2W Maximum DC Collector Current: 30 mA Maximum Operating Temperature: + 200 C Datenblatt: 2N930.pdf...

NPN Triple Diffused Planar Silicon Transistor - Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications - High speed : tf=100ns typ. - High breakdown voltage : VCBO=1500V - High reliability (Adoption of HVP process) - Collector-to-Emitter Voltage VCEO = 800 V - Emitter-to-Base Voltage VEBO = 6 V - Collector C...

Silicon NPN Triple Diffused - High breakdown voltage - VCES = 1500 V - Emitter to base voltage VEBO = 6 V - Collector current Ic = 6 A - Collector peak current IC(peak) = 7 A - Collector power dissipation Pc = 50 W - Built-in dampen diode type Datenblatt: 2SC4744.pdf...