Advanced Power P-Channel MOSFET - Transistor Polarity: P-Channel - Vds - Drain-Source Breakdown Voltage: - 250 V - Id - Continuous Drain Current: - 8.6 A - Rds On - Drain-Source Resistance: 800 mOhms - Vgs - Gate-Source Voltage: 30 V - Minimum Operating Temperature: - 55 C - Maximum Operating Temperature: + 150 C - Pd - Power ...

High Voltage Switchihg Dynamic Focus Application - High Collector-Emitter Breakdown Voltage : BVCEO=900V - Small Cob =2.8pF (Typ.) - Wide S.O.A - High reliability - VCBO Collector-Base Voltage 1500 V - VCEO Collector-Emitter Voltage 900 V - VEBO Emitter-Base Voltage 5 V - IC Collector Current (DC) 100 mA - ICP Collector Curre...

SIPMOS Power Transistor - N channel - Enhancement mode - Avalanche-rated - VDS= 100V - Id= 32A - Rds(on) = 0,06 Ohm data sheet: BUZ349.pdf...

High Voltage Switchihg Dynamic Focus Application - High Collector-Emitter Breakdown Voltage : BVCEO=900V - Small Cob =2.8pF (Typ.) - Wide S.O.A - High reliability - VCBO Collector-Base Voltage 1500 V - VCEO Collector-Emitter Voltage 900 V - VEBO Emitter-Base Voltage 5 V - IC Collector Current (DC) 100 mA - ICP Collector Curre...

N-Channel Power MOSFET - BVDSS = 900 V - RDS(on) = 6.2 Ohm - ID = 2 A - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area data sheet: SSS3N90A.pdf...

N-Channel Power MOSFET - BVDSS = 600 V - RDS(on) = 0.8 Ohm - ID = 5.1 A - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area data sheet: SSS10N60A.pdf...