A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case Input to Output Voltage ±1 kV Emitter-Collector Voltage 7 V Collector-Emitter Voltage 40 V Collector-Base Voltage 45 V Reverse Input Voltage 2 V Input Diode Continuous Forward Current at...

NPN Kleinleistungstransistor, AF Uces: 75 V Ic: 500 mA Ptot: 0,8 W fT > 70 MHz B: 100 ... 300...

NPN Small Signal Transistor 40V / 10mA / 60MHz data sheet: 2N914.pdf...

800V/3A Switching Regulator Applications - High breakdown voltage and high reliability. - Fast switching speed (tf : 0.1ms typ). - Wide ASO. - Adoption of MBIT process - Transistor type: NPN - Polarisation: bipolar - Collector-emitter voltage: 800V - Collector current:3A - Power: 50W - Case: TO220 - Mounting: THT - Fre...

-60V PNP Medium Power Transistor - BVCEO > -60V - IC = -2A High Continuous Collector Current - ICM = -6A Peak Pulse Current - TJ up to +200°C for High Temperature Operation - Low Saturation Voltage < -0.3V @ -1A - PD = 1W Power dissipation - for industrial and consumer applications including lamp and solenoid drivers, audio amp...

Silicon NPN Power Transistor - Material of transistor: Si - Polarity: NPN - Maximum collector power dissipation (Pc), W: 80 - Maximum collector-base voltage |Ucb|: 250V - Maximum emitter-base voltage |Ueb|: 5V - Maximum collector current |Ic max|: 4A - Maximum junction temperature (Tj): 150°C - Forward current transfer ratio (...