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Displaying 3583 to 3588 (of 5357 new products)
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  • CL10C110GB8NNNC
    new
    Added: 10/03/2011
    Modified: 10/03/2011

    CL10C110GB8NNNC

    Manufacturer: Samsung
    Description: Ceramic Cpapacitor 11pF / 50V / +-2% data sheet: CL10C.pdf...
    Price0.10 EUR excl. Tax
  • 06035A6R2CAT2A
    new
    Added: 10/03/2011
    Modified: 10/03/2011

    06035A6R2CAT2A

    Manufacturer: AVX Corporation
    Description: Ceramic Cpapacitor 6.2pF / 50V / +-0.25pF data sheet: 06035A6R2CAT2A.pdf...
    Price0.10 EUR excl. Tax
  • IRFP260PBF
    new
    Added: 09/30/2011
    Modified: 10/27/2023

    IRFP260PBF

    HEXFET Power MOSFET, 200V / 46A / 0.055 Ohm Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id ...
    Price3.00 EUR excl. Tax
  • CL10C110GB8NNNC
    new
    Added: 10/03/2011
    Modified: 10/03/2011
    Price0.10 EUR excl. Tax

    CL10C110GB8NNNC

    Manufacturer: Samsung
    Description: Ceramic Cpapacitor 11pF / 50V / +-2% data sheet: CL10C.pdf...
  • 06035A6R2CAT2A
    new
    Added: 10/03/2011
    Modified: 10/03/2011
    Price0.10 EUR excl. Tax

    06035A6R2CAT2A

    Manufacturer: AVX Corporation
    Description: Ceramic Cpapacitor 6.2pF / 50V / +-0.25pF data sheet: 06035A6R2CAT2A.pdf...
  • IRFP260PBF
    new
    Added: 09/30/2011
    Modified: 10/27/2023
    Price3.00 EUR excl. Tax

    IRFP260PBF

    HEXFET Power MOSFET, 200V / 46A / 0.055 Ohm Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 46 A Rds On - Drain-Source Resistance: 55 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Char...
Displaying 3583 to 3588 (of 5357 new products)
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