High Speed DuoPack: IGBT In Trench And Fieldstop Technology With Soft, Fast Recovery Anti-Parallel Diode 600V / 30A Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.95 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 60 A Pd - Power Dissi...

Switching Voltage Regulators Topology: Buck Output Voltage: 1.25 V to 16 V Output Current: 250 mA Number of Outputs: 1 Output Input Voltage, Min: 4 V Input Voltage, Max: 40 V Quiescent Current: 35 uA Switching Frequency: 1.2 MHz Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C Datenblatt: L...

Precision Amplifiers Number of Channels: 2 Channel GBP - Gain Bandwidth Product: 24 MHz SR - Slew Rate: 11 V/us CMRR - Common Mode Rejection Ratio: 84 dB Output Current per Channel: 120 mA Ib - Input Bias Current: 1 pA Vos - Input Offset Voltage: 600 uV en - Input Voltage Noise Density: 8 nV/sqrt Hz Supply Voltage - Max: 5.5 ...

RF Bipolar Transistors Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure: 1.1dB to 1.6dB Gain: 9.5dB to 13.5dB Power - Max. 380mW DC Current Gai.: 90 at 40mA, 3V Current - Collector Ic: 80mA Operating Temperature TJ: 150C Datenblatt: BFR380F.pdf...

MOSFET N-CH 55V 12A Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 29 mOhms Vgs - Gate-Source Voltage: - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage: 1 V Pd - Power Dissipation: 8 W Minimum Op...

NPN/NPN Resistor-Equipped Double Transistor Configuration: Dual Transistor Polarity: NPN Typical Input Resistor: 0 kOhms Typical Resistor Ratio: 0.213 Collector- Emitter Voltage VCEO Max: 50 V Continuous Collector Current: 100 mA Peak DC Collector Current: 100 mA Minimum Operating Temperature: - 65 C Maximum Operating Temper...